Xindao Electronics has launched a series of miniaturized power devices for applications such as wristbands/watches, which can meet the high-performance requirements of engineers and smaller packaging requirements. R&D no longer has to worry about the devices not being able to fit.
Miniaturized power devices-TVS
TVS (Transient Voltage Suppressor) diode, also known as transient suppression diode, is a widely used new type of efficient circuit protection device. It has extremely fast response time (sub nanosecond level) and relatively high surge absorption capacity. When its two ends are subjected to instantaneous high-energy shocks, TVS can quickly change the impedance value between the two ends from high impedance to low impedance to absorb a large instantaneous current, clamp the voltage at both ends to a predetermined value, and protect subsequent circuit components from the impact of transient high-voltage spikes.
When selecting TVS, the following main factors should be considered: → If TVS is likely to withstand peak pulse voltage (surge voltage) shocks from two directions, bipolar should be selected; otherwise, unipolarity can be chosen. The Vc value of the selected TVS should be lower than the highest voltage of the protected component. Vc is the voltage of the diode in the cut-off state, which is the voltage that passes through TVS during ESD impulse state. It cannot exceed the tolerable limit voltage of the protected circuit, otherwise the device faces the risk of damage.
TVS should not be in a breakdown state under normal working conditions, and it is best to be below VR. The appropriate TVS should be selected based on both VR and VC requirements.
The 0201 TVS and DFN0603 packages shown in the following figure have the following structural parameters:
More product models can refer to the following data:
Miniaturized power device MOSFET
MOSFET stands for MOSFET. MOSFET metal oxide semiconductor field-effect transistor, abbreviated as metal oxide semiconductor field-effect transistor (MOSFET).
Generally, it is a metal oxide semiconductor field-effect transistor, or also known as a metal insulator semiconductor. The source and drain of MOSFETs can be swapped, both of which are N-type regions formed in P-type backgate. In most cases, these two regions are the same, and even if the two ends are swapped, it will not affect the performance of the device. Such devices are considered symmetrical.
Field effect transistors are divided into PMOS transistors and NMOS transistors, which belong to insulated gate field-effect transistors.
The 0402 MOS, DFN1006-3L package shown in the figure below has the following structural parameters:
For more product models, please refer to the following data (click on the image to enlarge):
Miniaturized power device – transistor
A transistor, also known as a bipolar transistor or crystal transistor, is a semiconductor device that controls current. Its function is to amplify weak signals into electrical signals with larger amplitude values, and it is also used as a contactless switch.
The crystal transistor has a current amplification effect, and its essence is that the transistor can control the large variation of the collector current with a small change in the base current. This is the most fundamental and important characteristic of a transistor. We will Δ Ic/ Δ The ratio of Ib is called the current amplification factor of a crystal transistor, denoted by the symbol“ β” Represent. The current amplification factor is a constant value for a certain transistor, but it will also change to a certain extent as the base current changes during the operation of the transistor.
The 0402 transistor shown in the figure below is packaged in DFN1006-3L, with the following structural parameters：
For more product models, please refer to the following data (click on the image to enlarge):
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